Radiation-induced luminescence properties of Sn-doped hafnium aluminosilicate glass ceramics prepared by using a xenon image furnace

Abstract In this study, Sn-doped 10HfO 2 –10Al O 3 –80SiO glasses were prepared using a xenon imaging furnace and their physical, optical, scintillation properties investigated. At the composition ratio, specimens did not completely vitrify, they crystallized that contained nanocrystals of c-HfO . Raman spectra show absorption bands due to Si–O–Hf bonds, band clearly indicated an effective molecular mingling SiO HfO components in glass. Moreover, energy dispersive X-ray spectroscopy maps suggested elemental distribution glass specimen is heterogeneous. terms optical glass, all showed emission Sn 2+ , tendency increase photoluminescence quantum yield with increasing concentration. The estimated luminescence from pulse height spectrum measurements under alpha irradiation was ∼2500 ph MeV −1 approximately 35% GS-20 scintillator counterpart.